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High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
IXTH 3N120
V DSS
I D25
V DS(on)
= 1200 V
= 3A
= 4.5 ?
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
3N120
3N110
3N120
3N110
1200
1100
1200
1100
V
V
V
V
TO-247
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
S
D (TAB)
I D25
T C = 25 ° C
3
A
I DM
I AR
E AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
12
3
20
A
A
mJ
G = Gate
S = Source
D = Drain
TAB = Drain
E AS
700
mJ
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in) from case for 10 s
5
150
-55 to +150
150
-55 to +150
300
V/ns
W
° C
° C
° C
° C
Features
International standard packages
Low R DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
M d
Mounting torque
1.13/10 Nm/lb.in.
Advantages
Weight
6
g
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 I D25
1200
2.5
T J = 25 ° C
T J = 125 ° C
4.5
± 100
25
1
4.5
V
V
nA
μ A
mA
?
Note 1
? 2003 IXYS All rights reserved
DS99025(03/03)
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